The TeraSense series of terahertz sources (IMPATT diodes) is represented by silicon double drift diodes with a 0.6 um transit region, mounted on a copper heat sink.
The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped (p+)-region, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)-and (n+)-regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
Terasense is now offering its upgraded version of the terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order an IMPATT diode with either an open WR- flange or detachable horn antenna of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 2 W.
In addition, TeraSense sources feature ergonomic design and ease of use. The company can optionally supply a THz generator with attenuator and switch sections.
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